All-inorganic perovskite has the advantages of excellent light absorption, high carrier mobility and excellent light response. In this experiment, CsPbBr3 perovskite was synthesized at room temperature as the light-absorbing layer and resistance of the Photon detector (PD) The insulating layer of Resistive random access memory (RRAM) is configured with a simple structure Ag/PMMA/CsPbBr3/ITO. To avoid direct contact between the cathode and the anode, the PMMA solution is covered on the top of CsPbBr3, except to avoid direct contact between the upper and lower electrodes.In addition, it also fills the gaps between the CsPbBr3 crystal grains and reduces the defects between the grain boundaries. When the perovskite is used as the absorption layer of the detector, the collection efficiency of carriers after illumination is increased. As a memory, it can reduce the formation of leakage paths between the top (Ag) and bottom (ITO) electrodes.
In this experiment, ITO (Indium tin oxide) elements of the same structure are connected in series. When a positive bias is applied to the top (Ag) electrode, it acts as a memory, and when a negative bias is applied, it acts as a photodetector. By changing the light intensity, explore the changes in the photocurrent generated by the photon detector under different voltages, and then achieve the goal of driving the memory at low voltage